Growth and characterization of topological insulator Bi2Se3 thin films on SrTiO3 using pulsed laser deposition
Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3 (111)(STO) substrates using
pulsed laser deposition (PLD). The structural, morphological, electrical, and transport
properties were studied at various substrate temperatures (TS) from 120 to 350° C.
Amorphous films grown at TS< 180° C exhibited semiconducting behavior, and highly c-axis-
oriented textured films deposited at TS≥ 180° C exhibited metallic behavior. Bi2Se3 thin-
films were epitaxially grown on STO substrates at 300 and 350° C. Thickness-dependent …
pulsed laser deposition (PLD). The structural, morphological, electrical, and transport
properties were studied at various substrate temperatures (TS) from 120 to 350° C.
Amorphous films grown at TS< 180° C exhibited semiconducting behavior, and highly c-axis-
oriented textured films deposited at TS≥ 180° C exhibited metallic behavior. Bi2Se3 thin-
films were epitaxially grown on STO substrates at 300 and 350° C. Thickness-dependent …
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