We report the interplay between In incorporation and strain relaxation kinetics in high-In-
content In x Ga 1-x N (x= 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For
In mole fractions x= 0.13–0.48, best structural and morphological qualities are obtained
under In excess conditions, at In accumulation limit, and at a growth temperature where
InGaN decomposition is active. Under such conditions, in situ and ex situ analyses of the
evolution of the crystalline structure with the layer thickness point to an onset of misfit …