High doping density Schottky diodes in the 3mm wavelength cryogenic heterodyne receiver

VI Piddyachiy, VM Shulga, AM Korolev… - International journal of …, 2005 - Springer
VI Piddyachiy, VM Shulga, AM Korolev, VV Myshenko
International journal of infrared and millimeter waves, 2005Springer
The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-
temperature”) Schottky diodes. The measured equivalent noise temperature T eq of the
diodes is 109 K at 20 K, which is much higher than the T eq of the low doping density
(“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the
cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the
mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature …
Abstract
The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-temperature”) Schottky diodes. The measured equivalent noise temperature Teq of the diodes is 109 K at 20 K, which is much higher than the Teq of the low doping density (“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature ever reported for a Schottky diode mixer receiver. The results obtained are useful for the development of submm receivers in which high doping density Schottky diodes are used.
Springer
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