High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
The growth of high quality AlN and GaN thin films on basal plane sapphire,(100), and (111)
silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X‐
ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on
sapphire, respectively. Room‐temperature optical transmission and photoluminescence (of
GaN) measurements confirmed the high quality of the films. The luminescence at 300 and
77 K of the GaN films grown on basal plane sapphire,(100), and (111) silicon was …
silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X‐
ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on
sapphire, respectively. Room‐temperature optical transmission and photoluminescence (of
GaN) measurements confirmed the high quality of the films. The luminescence at 300 and
77 K of the GaN films grown on basal plane sapphire,(100), and (111) silicon was …
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