High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor
In this paper, we report multi-threshold-voltage (multi-Vt) options for stacked Nanosheet gate-
all-around (GAA) transistors. V t can be modulated through workfunction metal (WFM)
thickness as well as the inter-nanosheet spacing (T sus), the combination of which may be
leveraged to increase the number of undoped V t offerings within a CMOS device menu
relative to a FinFET CMOS device menu, which fundamentally does not have T sus as a V t
tuning option. Hence we propose our multi-V t scheme by taking advantage of the unique …
all-around (GAA) transistors. V t can be modulated through workfunction metal (WFM)
thickness as well as the inter-nanosheet spacing (T sus), the combination of which may be
leveraged to increase the number of undoped V t offerings within a CMOS device menu
relative to a FinFET CMOS device menu, which fundamentally does not have T sus as a V t
tuning option. Hence we propose our multi-V t scheme by taking advantage of the unique …