High-performance nanowire oxide photo-thin film transistor.
Advanced Materials (Deerfield Beach, Fla.), 2013•europepmc.org
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography
and conventional dry etch processing.. The device characteristics are good, including
endurance of up to 10 (6) test cycles, and gate-pulse excitation is used to remove persistent
photoconductivity. The viability of nanowire oxide phototransistors for high speed and high
resolution applications is demonstrated, thus potentially expanding the scope of exploitation
of touch-free interactive displays.
and conventional dry etch processing.. The device characteristics are good, including
endurance of up to 10 (6) test cycles, and gate-pulse excitation is used to remove persistent
photoconductivity. The viability of nanowire oxide phototransistors for high speed and high
resolution applications is demonstrated, thus potentially expanding the scope of exploitation
of touch-free interactive displays.
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10 (6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.
europepmc.org
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