Materials containing zinc are interesting because of their applications in many areas of modern technology. Zinc sulfide thin films with wide direct band gap and n-type conductivity are promising for optoelectronic device applications, such as electroluminescent devices and photovoltaic cells. ZnS is an important semiconductor material with large bandgap (> 3.7 eV)[1]. It has found wide use as a thin film coating in the optical and microelectronic industries. It has high refractive index (2.25), high effective dielectric constant (9) and wide wavelength pass band (0.4-13μm). It is commonly used as a filter, reflector and planar waveguide. Various techniques such as molecular beam epitaxy [2], pulsed electrochemical deposition [3], sputtering [4], metal organic vapour phase epitaxy [5], successive ionic layer adsorption and reaction [6, 7], spray pyrolysis [8], atomic layer deposition [9], dip technique [10] and chemical bath deposition [11] have been employed to prepare ZnS thin films.

In the past 10 years, extensive attention has been paid to the preparation and characterization of semiconductor sulfides as a consequence of their interesting properties and potential applications. In earlier works NH3 has been used as a complexing agent whereas in the present work triethylamine has been used as complexing agent. This paper presents structural studies on CBD ZnS thin films using TEA as complexing agent [1-3].