Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS): n-Si heterostructure
M Das, P Nath, D Sarkar - Superlattices and Microstructures, 2016 - Elsevier
In this article effect of etching current density (J) on the microstructural, optical and electrical
properties of photoelectrochemically prepared heterostructure is reported. Prepared
samples are characterized by FESEM, XRD, UV–Visible, Raman and photoluminescence
(PL) spectra and current–voltage (I–V) characteristics. FESEM shows presence of mixture of
randomly distributed meso-and micro-pores. Porous layer thickness determined by cross
section view of SEM is proportional to J. XRD shows crystalline nature but gradually extent …
properties of photoelectrochemically prepared heterostructure is reported. Prepared
samples are characterized by FESEM, XRD, UV–Visible, Raman and photoluminescence
(PL) spectra and current–voltage (I–V) characteristics. FESEM shows presence of mixture of
randomly distributed meso-and micro-pores. Porous layer thickness determined by cross
section view of SEM is proportional to J. XRD shows crystalline nature but gradually extent …
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