Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors
The modeling of nanoscale semiconductor devices is usually performed in a self-consistent
Schrödinger–Poisson procedure. This letter reports an application of a more general
approach based on the so-called GW approximation. We numerically determine the
contribution due to the interface dynamic polarization and its influence on the subthreshold
slope and threshold voltage. Results are given for a nanowire transistor for which the
influence of the confinement and the nature of the gate oxide are analyzed. Interface …
Schrödinger–Poisson procedure. This letter reports an application of a more general
approach based on the so-called GW approximation. We numerically determine the
contribution due to the interface dynamic polarization and its influence on the subthreshold
slope and threshold voltage. Results are given for a nanowire transistor for which the
influence of the confinement and the nature of the gate oxide are analyzed. Interface …
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