Scandium-doped aluminum nitride (AlScN) on insulator is a potential platform for realizing a diverse range of applications in photonic devices, due to its large piezoelectric effects, large optical nonlinear effects, unique pyroelectric effects, and broad transparency window. In this work, we report the characterization of thin-film AlScN microring resonators with Sc doping of 9% and 18% fabricated on 8-inch silicon (Si) wafers. Through complementary metal-oxide semiconductor (CMOS) compatible fabrication processes, microring resonators with high-quality (Q) factors are successfully demonstrated, and their optical propagation losses are thoroughly assessed. Experimental results show promissing application of integrated AlScN-based photonics devices with Sc doping up to 18%.