Solution-processed memory diodes based on phase separated blends of ferroelectric and
semiconducting polymers in the low resistance on-state operate similar to a vertical field-
effect transistor at the pinch-off. Numerical simulations have shown that the performance of
the diode is dominated by the conduction of charge carriers at the interface between the
semiconductor and ferroelectric phases. Here, we present an unambiguous experimental
demonstration of the charge injection process in the diodes. We employ a modified diode …