Landau levels in graphene bilayer quantum dots
Physical Review B—Condensed Matter and Materials Physics, 2009•APS
We investigate localized electron and hole states in parabolic quantum dots of biased
graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots
can be created by means of nanostructured gates or by position-dependent doping, which
can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical
results show the energy levels of confined electrons and holes as a function of the dot
parameters and the magnetic field. Remarkable crossings of energy levels are found.
graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots
can be created by means of nanostructured gates or by position-dependent doping, which
can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical
results show the energy levels of confined electrons and holes as a function of the dot
parameters and the magnetic field. Remarkable crossings of energy levels are found.
We investigate localized electron and hole states in parabolic quantum dots of biased graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots can be created by means of nanostructured gates or by position-dependent doping, which can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical results show the energy levels of confined electrons and holes as a function of the dot parameters and the magnetic field. Remarkable crossings of energy levels are found.
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