Landau levels of single-layer and bilayer phosphorene
JM Pereira Jr, MI Katsnelson - Physical Review B, 2015 - APS
Physical Review B, 2015•APS
In this work we introduce a low-energy Hamiltonian for single-layer and bilayer black
phosphorus that describes the electronic states at the vicinity of the Γ point. The model is
based on a recently proposed tight-binding description for electron and hole bands close to
the Fermi level. We calculate expressions for the Landau-level spectrum as function of
magnetic field, and in the case of bilayer black phosphorus we investigate the effect of an
external bias on the electronic band gap. The results showcase the highly anisotropic …
phosphorus that describes the electronic states at the vicinity of the Γ point. The model is
based on a recently proposed tight-binding description for electron and hole bands close to
the Fermi level. We calculate expressions for the Landau-level spectrum as function of
magnetic field, and in the case of bilayer black phosphorus we investigate the effect of an
external bias on the electronic band gap. The results showcase the highly anisotropic …
In this work we introduce a low-energy Hamiltonian for single-layer and bilayer black phosphorus that describes the electronic states at the vicinity of the point. The model is based on a recently proposed tight-binding description for electron and hole bands close to the Fermi level. We calculate expressions for the Landau-level spectrum as function of magnetic field, and in the case of bilayer black phosphorus we investigate the effect of an external bias on the electronic band gap. The results showcase the highly anisotropic character of black phosphorus, and in particular for bilayer BP, the presence of bias allows for a field-induced semiconductor-metal transition.
American Physical Society以上显示的是最相近的搜索结果。 查看全部搜索结果