… detail a laser based on strained undoped germanium. We report for strained Ge key lasing
… quantum efficiency when the laser operates above a sharp laser threshold as well as the …

… Ge/SOI structures with different strain, using an excitation power of 4.5 mW from a laser
source operating in continuous wave at a wavelength of 532 nm. The laser spot size was set to a …

… In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method
for determining the population inversion gain and the material and optical losses of group …

… Ge with tensile strain [5] by alloying with Sn [6] or both [7], [8]. Here, we demonstrate steady
state lasing at low temperature in strained germanium microbridges and establish this finding …

… Strain engineering has become a widely used strategy to enhance the performance of …
be tailored by strain. For germanium, it has been predicted that high tensile strain can tune the …

… -strained germanium into microbridges can enhance the tensile strain 5 and provide direct
bandgap germanium. … Lasing with very lightly strained germanium has been reported but with …

… lasing in strained germanium upon pulsed excitation at low temperature and demonstrate
the typical lasing … Highly strained germanium microbridges throughout this work are obtained …

… strain states from substrates with low biaxial prestrain is introduced and demonstrated on the
two most important semiconductors used in CMOS technology: silicon and germanium… laser…

… A highly strained germanium microbridge is a promising … uniaxially tensile-strained germanium
microbridges. These peaks … in the microbridge, the Q-factor is too low to be used in laser …

… Tensilely strained germanium has been considered a suitable … laser that could allow the
development of miniaturized photonic integrated circuits. The crystalline quality of germanium is …