Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
We investigate the role of grains and grain boundaries (GBs) in the electron transport
through poly-crystalline HfO 2 by means of conductive atomic force microscopy (CAFM)
measurements and trap-assisted tunneling simulations. CAFM experiments demonstrate
that the leakage current through a thin dielectric film preferentially flows via the GBs. The
current IV characteristics measured on both types of sites, grains, and GBs are successfully
simulated by utilizing the multiphonon trap-assisted tunneling model, which accounts for the …
through poly-crystalline HfO 2 by means of conductive atomic force microscopy (CAFM)
measurements and trap-assisted tunneling simulations. CAFM experiments demonstrate
that the leakage current through a thin dielectric film preferentially flows via the GBs. The
current IV characteristics measured on both types of sites, grains, and GBs are successfully
simulated by utilizing the multiphonon trap-assisted tunneling model, which accounts for the …
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