Magnetoresistance in Sn-Doped In2O3Nanowires
Nanoscale research letters, 2009•Springer
In this work, we present transport measurements of individual Sn-doped In 2 O 3 nanowires
as a function of temperature and magnetic field. The results showed a localized character of
the resistivity at low temperatures as evidenced by the presence of a negative temperature
coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as
the mechanism responsible by the negative temperature coefficient of the resistance at low
temperatures.
as a function of temperature and magnetic field. The results showed a localized character of
the resistivity at low temperatures as evidenced by the presence of a negative temperature
coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as
the mechanism responsible by the negative temperature coefficient of the resistance at low
temperatures.
Abstract
In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
Springer
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