Measurement of charge carrier mobility in perovskite nanowire films by photo-CELIV method
A Aukštuolis, M Girtan, GA Mousdis, R Mallet… - Proceedings of the …, 2017 - hal.science
Proceedings of the Romanian Academy-Series A (Mathematics, Physics …, 2017•hal.science
In this paper the holes' mobility for the configuration FTO/TiO2/CH3NH3PbI3/Spiro-
MeOTAD/Au was measured for the first time by the Photo-CELIV method. The TiO2 dense
film was deposited by reactive sputtering at room temperature on FTO glass substrates. High
crystalized perovskite films were deposited from solutions in one step by spin coating. Spiro-
MeOTAD molecular glass was used as holes transporting layer. The highest holes' mobility
from TiO2 thin film through the perovskite and Spiro MeOTAD film to the top gold electrode …
MeOTAD/Au was measured for the first time by the Photo-CELIV method. The TiO2 dense
film was deposited by reactive sputtering at room temperature on FTO glass substrates. High
crystalized perovskite films were deposited from solutions in one step by spin coating. Spiro-
MeOTAD molecular glass was used as holes transporting layer. The highest holes' mobility
from TiO2 thin film through the perovskite and Spiro MeOTAD film to the top gold electrode …
In this paper the holes' mobility for the configuration FTO/TiO2/CH3NH3PbI3/Spiro-MeOTAD/Au was measured for the first time by the Photo-CELIV method. The TiO2 dense film was deposited by reactive sputtering at room temperature on FTO glass substrates. High crystalized perovskite films were deposited from solutions in one step by spin coating. Spiro-MeOTAD molecular glass was used as holes transporting layer. The highest holes' mobility from TiO2 thin film through the perovskite and Spiro MeOTAD film to the top gold electrode was of order 8.5×10-7 cm2/Vs.
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