The direct access of the topological surface states by electrical transport measurements is a
necessary requirement for the implementation of the exceptional properties of topological
insulators (TIs) in applications. In most TIs, however, the bulk is not insulating and the Dirac
point is not exposed or not close to the Fermi level, masking the topological phenomena.
Therefore, band structure engineering, eg by combining TI materials with complementary
electronic properties, is in the focus of the research. Here we study the very promising …

The hunt for an ideal topological insulator, where the Dirac point is situated in a desirable
energetic position and the bulk remains insulating, has motivated experiments on band
structure engineering in these materials. To achieve this, Sb 2 Te 3 and Bi 2 Te 3 are
commonly combined in ternary compounds or, less frequently, in heterostructures. Here we
report on the growth of Sb 2 Te 3/Bi 2 Te 3 heterostructures by means of molecular-beam
epitaxy. Using angle-resolved photoelectron spectroscopy, we are able to differentiate …