Nanometer scale patterning of GaN using nanoimprint lithography and Inductively Coupled Plasma etching
M Ekielski, M Juchniewicz, M Płuska, M Wzorek… - Microelectronic …, 2015 - Elsevier
In this paper results on GaN patterning using nanoimprint technology are presented. Direct
method of stamp fabrication based on FIB etching was used. Stamp with critical dimensions
of 50 nm was achieved. Two kinds of polymer materials were used for master stamp
replication. Influence of etching parameters using chlorine based plasma on GaN etch rate
and surface roughness was discussed. Triple mask consisting of TU2 resist, Cr and SiO 2
used for NIL-generated pattern transfer into GaN allowed successful patterning.
method of stamp fabrication based on FIB etching was used. Stamp with critical dimensions
of 50 nm was achieved. Two kinds of polymer materials were used for master stamp
replication. Influence of etching parameters using chlorine based plasma on GaN etch rate
and surface roughness was discussed. Triple mask consisting of TU2 resist, Cr and SiO 2
used for NIL-generated pattern transfer into GaN allowed successful patterning.
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