Near infrared photoluminescence from bismuth-doped nanoporous silica thin films
Photoluminescence (PL) properties of bismuth (Bi) doped porous silica thin films annealed
at various temperatures and in different atmospheres were studied. The near infrared (NIR)
luminescence depended strongly on the annealing atmosphere and temperature. To reveal
the origin of the NIR luminescence, we performed comprehensive PL studies including
steady state and time-resolved PL measurements at 8–300 K in wide excitation (250–500
nm) and detection (400–1550 nm) wavelength ranges. It was revealed that multiple Bi …
at various temperatures and in different atmospheres were studied. The near infrared (NIR)
luminescence depended strongly on the annealing atmosphere and temperature. To reveal
the origin of the NIR luminescence, we performed comprehensive PL studies including
steady state and time-resolved PL measurements at 8–300 K in wide excitation (250–500
nm) and detection (400–1550 nm) wavelength ranges. It was revealed that multiple Bi …
以上显示的是最相近的搜索结果。 查看全部搜索结果