Nonmetallic conduction in electron inversion layers at low temperatures
We have measured the resistance of electron inversion layers in Si metal-oxide-
semiconductor field-effect transistors at low temperatures (∼ 50 mK) and low electric fields
(∼ 0.1 V/m). At low values of R□ we observe logarithmic dependences of the resistance on
both temperature and applied electric field which scale only on R□. We observe a gradual
transition to an exponential dependence at R□≳ 10 kΩ. The logarithmic dependences
agree qualitatively but not quantitatively with current theories of localization.
semiconductor field-effect transistors at low temperatures (∼ 50 mK) and low electric fields
(∼ 0.1 V/m). At low values of R□ we observe logarithmic dependences of the resistance on
both temperature and applied electric field which scale only on R□. We observe a gradual
transition to an exponential dependence at R□≳ 10 kΩ. The logarithmic dependences
agree qualitatively but not quantitatively with current theories of localization.
Abstract
We have measured the resistance of electron inversion layers in Si metal-oxide-semiconductor field-effect transistors at low temperatures (∼ 50 mK) and low electric fields (∼ 0.1 V/m). At low values of R□ we observe logarithmic dependences of the resistance on both temperature and applied electric field which scale only on R□. We observe a gradual transition to an exponential dependence at R□≳ 10 kΩ. The logarithmic dependences agree qualitatively but not quantitatively with current theories of localization.
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