On the nature of shunt leakage in amorphous silicon pin solar cells
S Dongaonkar, Y Karthik, D Wang… - IEEE Electron …, 2010 - ieeexplore.ieee.org
IEEE Electron Device Letters, 2010•ieeexplore.ieee.org
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order
of square centimeters) thin-film a-Si: H pin solar cells and show that it is characterized by
following universal features:(1) voltage symmetry;(2) power-law voltage dependence; and
(3) weak temperature dependence. The voltage symmetry offers a robust empirical method
to isolate the diode current from measured “shunt-contaminated” forward dark IV. We find
that space-charge-limited current provides the best qualitative explanation for the observed …
of square centimeters) thin-film a-Si: H pin solar cells and show that it is characterized by
following universal features:(1) voltage symmetry;(2) power-law voltage dependence; and
(3) weak temperature dependence. The voltage symmetry offers a robust empirical method
to isolate the diode current from measured “shunt-contaminated” forward dark IV. We find
that space-charge-limited current provides the best qualitative explanation for the observed …
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si:H p-i-n solar cells and show that it is characterized by following universal features: (1) voltage symmetry; (2) power-law voltage dependence; and (3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured “shunt-contaminated” forward dark IV. We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental observations from literature.
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