[HTML][HTML] Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
R Butté, L Lahourcade, TK Uždavinys… - Applied Physics …, 2018 - pubs.aip.org
To assess the impact of random alloying on the optical properties of the InGaN alloy, high-
quality In x Ga 1− x N (0< x< 0.18) epilayers grown on c-plane free-standing GaN substrates
are characterized both structurally and optically. The thickness (25–100 nm) was adjusted to
keep these layers pseudomorphically strained over the whole range of explored indium
content as checked by x-ray diffraction measurements. The evolution of the low temperature
optical absorption (OA) edge linewidth as a function of absorption energy, and hence the …
quality In x Ga 1− x N (0< x< 0.18) epilayers grown on c-plane free-standing GaN substrates
are characterized both structurally and optically. The thickness (25–100 nm) was adjusted to
keep these layers pseudomorphically strained over the whole range of explored indium
content as checked by x-ray diffraction measurements. The evolution of the low temperature
optical absorption (OA) edge linewidth as a function of absorption energy, and hence the …
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