Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
SA Blokhin, JA Lott, A Mutig, G Fiol… - Electronics …, 2009 - search.proquest.com
Electronics Letters, 2009•search.proquest.com
The oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s with
current densities of~ 10 kA/cm^ sup 2^ are realised. The deconvoluted rise time of the
device is below 10 ps and the remains are hardly temperature sensitive up to 100 degrees
Celsius.
current densities of~ 10 kA/cm^ sup 2^ are realised. The deconvoluted rise time of the
device is below 10 ps and the remains are hardly temperature sensitive up to 100 degrees
Celsius.
Abstract
The oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s with current densities of~ 10 kA/cm^ sup 2^ are realised. The deconvoluted rise time of the device is below 10 ps and the remains are hardly temperature sensitive up to 100 degrees Celsius.
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