Over the past few years, MOSFET has played a tremendous role in IC technology. In this paper, we have proposed a novel device dielectric pocket-enhanced FinFET which we have is based on TFET whose characteristics are found to be better than conventional devices. Various performance parameters were compared like I_ON, I_OFF, I_ON/I_OFF ratio, subthreshold swing, transconductance and results were compared which gave us the best device out of the four we created which is DGDP. We found subthreshold swing was 0.0159547 mV/decade which is the best out of the four devices we created. This is simulation-based work performed on ATLAS device simulator.