Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy
The influence of initial growth conditions and lattice matching on the deep level spectrum of
n-ZnSe grown on GaAs by molecular-beam epitaxy is investigated by means of deep level
optical spectroscopy. A detailed study of both the steady-state and transient
photocapacitance allows us to measure optical threshold energies, concentrations, and
emission rates of electronically active defects in the ZnSe layer. Several deep levels are
found in the ZnSe layer at E c− E t= 1.15, 1.46, 1.90, and 2.25 eV with concentrations in the …
n-ZnSe grown on GaAs by molecular-beam epitaxy is investigated by means of deep level
optical spectroscopy. A detailed study of both the steady-state and transient
photocapacitance allows us to measure optical threshold energies, concentrations, and
emission rates of electronically active defects in the ZnSe layer. Several deep levels are
found in the ZnSe layer at E c− E t= 1.15, 1.46, 1.90, and 2.25 eV with concentrations in the …
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