Deep ultraviolet photoluminescence spectroscopy was employed to study the impurity
transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was
observed in Mg-doped Al x Ga 1− x N alloys, which was identified to have the same origin as
the previously reported blue line at 2.8 eV in Mg-doped GaN and was assigned to the
recombination of electrons bound to the nitrogen vacancy with three positive charges (VN
3+) and neutral Mg acceptors. Based on the measured activation energies of the Mg …

Deep ultraviolet photoluminescence spectroscopy was employed to study the impurity
transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was
observed in Mg-doped AlxGa1− xN alloys, which was identified to have the same origin as
the previously reported blue line at 2.8 eV in Mg-doped GaN and was assigned to the
recombination of electrons bound to the nitrogen vacancy with three positive charges (VN
3+) and neutral Mg acceptors. Based on the measured activation energies of the Mg …