Poly (3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
E Katsia, N Huby, G Tallarida… - Applied Physics …, 2009 - pubs.aip.org
Hybrid poly (3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions
for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of
poly (3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of
nearly 10 5 at±4 V and a current density of 10 4 A/cm 2. Electrical characteristics are
discussed taking into account the chemical structure of the stack and the energy band
diagram.
for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of
poly (3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of
nearly 10 5 at±4 V and a current density of 10 4 A/cm 2. Electrical characteristics are
discussed taking into account the chemical structure of the stack and the energy band
diagram.
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