Thin Er, Yb co–doped Y₂O₃ films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1MeV Er⁺ ions to a fluence of 6×10¹⁴at/cm² at room temperature was performed in order to modify the structure of the as-deposited films. The as-deposited films have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900°C for 1h in oxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100nm. The Er³⁺ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb³⁺ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900°C annealing.