… with the improvements in performance achieved through a recessed gate. … of MODFETs
were fabricated on GaN/A1027Ga073 heterostructure, one with and one without a recessed gate…

… /GaN MODFET with the gate length of 2.1 μm on sapphire by use of the high-quality
AlGaN/GaN heterostructure and recessed gate … 74N/GaN MODFET grown on a (0001) sapphire …

… recessed-gate GaN MOSFET with a double-insulator gate structure. The measurements were
performed in pulsed mode, and gate… 2(b) for the same GaN MOSFET that was used in Fig. 2…

… -gated AlGaN/GaN MOSFET has been demonstrated with a novel method using … gate
recess process for realization of normally-off recess-gated AlGaN/GaN MOSFET [9]. The …

… However, such advantage was not observed in our previous E-mode GaN MOSFET [13] …
E-mode GaN recessed gate MOSFET was demonstrated successfully with negligible gate …

… In this work, a normally-off GaN recessed-gate MOSFET was … /GaN heterostructure was
selectively grown on a semi-insulating GaN/Si (SI-GaN/Si) template to naturally form a recessed …

… -off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to
… The trigate structure offered excellent channel control, enhancing VTH from +0.3 V for the …

… In GaN-based HFETs, gate recess technology is significant for realizing both normally OFF …
/InGaAs/InP MODFET’s with uniform threshold voltage obtained by selective wet gate recess,” …

… -OFF GaN MOSFET with AlGaN/GaN access regions using a digital gate-recess technique
… This digital recess technique is used to completely remove the barrier layer with good …

… MOCVDgrown AlGaN/GaN MODFET on sapphire using recessed gate process. The electron
mobility and the sheet carrier density in the AlGaN/GaN heterostructure were 740 cm2Nes …