Single crystal SiC has become an important epitaxial layer material because of its excellent
physical and chemical properties. It is widely used in satellite communications, integrated
circuits, and consumer electronics. The growth of an epitaxial layer of SiC wafer requires an
ultra-smooth, flat surface with low process surface damage and residual stress on the single
crystal SiC surface. The surface quality determines the subsequent epitaxial layer quality
and ultimately affects the performance of the device. Chemical mechanical polishing (CMP) …