Lead selenide layers were obtained by thermal evaporation in vacuum on thermally
oxidized silicon. As-deposited layers present no response to infrared radiation and an
activation procedure is mandatory. The sensitization process described in this work consists
of a thermal treatment developed in two different stages: The first step in an iodine and
oxygen rich atmosphere at 220° C, and the second one at a higher temperature (450° C) on
air. After this treatment, the developed photodetectors show high sensitivity to medium …