Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect
H Akinaga, M Mizuguchi, K Ono, M Oshima - Applied Physics Letters, 2000 - pubs.aip.org
A huge positive magnetoresistance effect has been discovered in MnSb granular films.
Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs
(001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits
magnetic-field-sensitive current–voltage characteristics. When a constant voltage, above the
threshold value, is applied to the film, more than 1000% change in the current, which we
term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively …
Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs
(001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits
magnetic-field-sensitive current–voltage characteristics. When a constant voltage, above the
threshold value, is applied to the film, more than 1000% change in the current, which we
term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively …
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