Selective area growth rates of III-V nanowires
ME Cachaza, AW Christensen, D Beznasyuk… - Physical Review …, 2021 - APS
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-
controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and
desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We
propose a model for the crystal growth rates that considers two parameter groups: the crystal
growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs
as a platform, we show how the design parameters such as NW pitch, width, and orientation …
controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and
desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We
propose a model for the crystal growth rates that considers two parameter groups: the crystal
growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs
as a platform, we show how the design parameters such as NW pitch, width, and orientation …
Selective Area Growth Rates of III-V Nanowires
M Espiñeira Cachaza, A Wulff Christensen… - arXiv e …, 2021 - ui.adsabs.harvard.edu
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-
controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and
desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We
propose a model for the crystal growth rates that considers two parameter groups: the crystal
growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs
as platform we show how the design parameters such as NW pitch, width, and orientation …
controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and
desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We
propose a model for the crystal growth rates that considers two parameter groups: the crystal
growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs
as platform we show how the design parameters such as NW pitch, width, and orientation …
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