Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb
Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An
absorption layer composition of In 0.28 Ga 0.72 As 0.25 Sb 0.75 allowed for lattice matching
to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature.
Arrhenius plots of the dark current density showed diffusion limited dark currents
approaching those expected for optimized HgCdTe-based detectors. Specific detectivity
figures of around 7× 10 10 Jones and 1× 10 10 Jones were calculated, for 240 K and room …
absorption layer composition of In 0.28 Ga 0.72 As 0.25 Sb 0.75 allowed for lattice matching
to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature.
Arrhenius plots of the dark current density showed diffusion limited dark currents
approaching those expected for optimized HgCdTe-based detectors. Specific detectivity
figures of around 7× 10 10 Jones and 1× 10 10 Jones were calculated, for 240 K and room …
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