SiGe HBT technology with f/sub max//f/sub T/= 350/300 GHz and gate delay below 3.3 ps
M Khater, JS Rieh, T Adam… - IEDM Technical …, 2004 - ieeexplore.ieee.org
M Khater, JS Rieh, T Adam, A Chinthakindi, J Johnson, R Krishnasamy, M Meghelli…
IEDM Technical Digest. IEEE International Electron Devices Meeting …, 2004•ieeexplore.ieee.orgThis work reports on SiGe HBT technology with f/sub max/and f/sub T/of 350 GHz and 300
GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any
Si-based transistor in terms of combined performance of f/sub max/and f/sub T/both of which
exhibit 300 GHz and above. Associated BV/sub CEO/and BV/sub CBO/are measured to be
1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and
device dimension has been investigated. Considerations regarding the extraction of such …
GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any
Si-based transistor in terms of combined performance of f/sub max/and f/sub T/both of which
exhibit 300 GHz and above. Associated BV/sub CEO/and BV/sub CBO/are measured to be
1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and
device dimension has been investigated. Considerations regarding the extraction of such …
This work reports on SiGe HBT technology with f/sub max/ and f/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f/sub max/ and f/sub T/ both of which exhibit 300 GHz and above. Associated BV/sub CEO/ and BV/sub CBO/ are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub max/ and f/sub T/ values are also discussed.
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