Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
Si-based tunneling field-effect transistors (TFETs) with elevated Ge source were fabricated
on Si (110) substrate. The in situ B-doped Ge (Ge: B) source grown on Si (110) has a
substitutional B concentration up to 7.8× 10 20 cm− 3, that is more than one order of
magnitude higher than that in Ge grown on Si (100) under the same growth conditions. Ge:
B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on
Si (110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement …
on Si (110) substrate. The in situ B-doped Ge (Ge: B) source grown on Si (110) has a
substitutional B concentration up to 7.8× 10 20 cm− 3, that is more than one order of
magnitude higher than that in Ge grown on Si (100) under the same growth conditions. Ge:
B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on
Si (110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement …
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