Single event upset and total ionizing dose response of 12LP FinFET digital circuits

J Neuendank, M Spear, T Wallace… - 2022 IEEE Radiation …, 2022 - ieeexplore.ieee.org
Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital
structures to 10 keV x-ray, ^60\mathrmCo gamma rays, and heavy ions. Among the
structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other
test structures include digital cells including modified inverters, two input NOR, three input
NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 \mathrmrad(\
mathrmSiO_2)/\mathrms gamma rays were provided by Sandia National Laboratories in …

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits.

M Spear, T Wallace, D Wilson, J Solano, G Irumva… - 2022 - osti.gov
Foundries (GF) 12-nm bulk FinFET digital structures to 60 keV xray, 60Co gamma rays, and
heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840
digital flip-flops (DFF). Other test structures include digital cells including modified inverters,
two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources
and 63.6 rad (SiO2)/s gamma rays were provided by Sandia National Laboratories in
Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in …
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