Single-ended 10T SRAM cell with high yield and low standby power
Circuits, Systems, and Signal Processing, 2021•Springer
This paper introduces a 10T single-ended SRAM cell with high stability and low static power.
The read static noise margin is augmented by using a Schmitt-trigger inverter and
decoupling the storage node from the read bitline by adding one transistor. Since writing “1”
is difficult in single-ended SRAM cells, using proper capacitive coupling and also extra
pMOS transistor as an access transistor mitigates the problem. To evaluate read, write, and
hold yields, we performed 10,000 Monto Carlo simulations in the 32-nm technology, and the …
The read static noise margin is augmented by using a Schmitt-trigger inverter and
decoupling the storage node from the read bitline by adding one transistor. Since writing “1”
is difficult in single-ended SRAM cells, using proper capacitive coupling and also extra
pMOS transistor as an access transistor mitigates the problem. To evaluate read, write, and
hold yields, we performed 10,000 Monto Carlo simulations in the 32-nm technology, and the …
Abstract
This paper introduces a 10T single-ended SRAM cell with high stability and low static power. The read static noise margin is augmented by using a Schmitt-trigger inverter and decoupling the storage node from the read bitline by adding one transistor. Since writing “1” is difficult in single-ended SRAM cells, using proper capacitive coupling and also extra pMOS transistor as an access transistor mitigates the problem. To evaluate read, write, and hold yields, we performed 10,000 Monto Carlo simulations in the 32-nm technology, and the results show our cell has 7.5×, 1.4×, and 1.1 × more yields than that of the conventional 6T SRAM cell. The proposed cell also has the least static power consumption. This amount is 1.5× less than the conventional 6T at the supply voltage of 0.5 V.
Springer
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