Soft errors such as single-node upset (SNU) and multiple-node upset (MNU) have become a major problem for SRAMs in aircraft and terrestrial applications. In this letter, a novel low-cost and write enhancement soft-error-aware-14T (LWS14T) SRAM cell is proposed to provide sufficient protection against soft errors. The obtained observations demonstrate that the LWS14T can recover not only from SNUs but also from MNUs irrespective of the upset polarity. Furthermore, compared to considered RHBD cells, the LWS14T has reduced the cost in terms of power and delay. Also, the LWS14T gives the better critical charge, better stability, and better writability.