[HTML][HTML] Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01)
The energy band alignment between atomic layer deposited (ALD) SiO 2 and β-Ga 2 O 3 (
2 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of
metal-oxide semiconductor capacitor structures. The valence band offset between SiO 2 and
Ga 2 O 3 is found to be 0.43 eV. The bandgap of ALD SiO 2 was determined to be 8.6 eV,
which gives a large conduction band offset of 3.63 eV between SiO 2 and Ga 2 O 3. The
large conduction band offset makes SiO 2 an attractive gate dielectric for power devices.
2 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of
metal-oxide semiconductor capacitor structures. The valence band offset between SiO 2 and
Ga 2 O 3 is found to be 0.43 eV. The bandgap of ALD SiO 2 was determined to be 8.6 eV,
which gives a large conduction band offset of 3.63 eV between SiO 2 and Ga 2 O 3. The
large conduction band offset makes SiO 2 an attractive gate dielectric for power devices.
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