Strain dependence of indirect band gap for strained silicon on insulator wafers
We have used low temperature photoluminescence measurements in order to quantify the
impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on
insulator layers. A redshift of the transverse optical phonon excitonic recombination in the
strained silicon layer was evidenced as the strain in the layer is increased. Band gap
shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were
obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured …
impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on
insulator layers. A redshift of the transverse optical phonon excitonic recombination in the
strained silicon layer was evidenced as the strain in the layer is increased. Band gap
shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were
obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured …
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