The study of the solid-phase epitaxial growth (SPEG) process of Si (variously referred to as
solid-phase epitaxy, solid-phase epitaxial regrowth, solid-phase epitaxial crystallization, and
solid-phase epitaxial recrystallization) amorphized via ion implantation has been a topic of
fundamental and technological importance for several decades. Overwhelmingly, SPEG has
been studied (and viewed) as a single-directional process where an advancing growth front
between amorphous and crystalline Si phases only has one specific crystallographic …