The significant inversion symmetry breaking specific to wurtzite semiconductors, and the
associated spontaneous electrical polarization, lead to outstanding features such as high
density of carriers at the GaN/(Al, Ga) N interface—exploited in high-power/high-frequency
electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy
harvesting devices. Here we show that the multifunctionality of nitride semiconductors
encompasses also a magnetoelectric effect allowing to control the magnetization by an …