Heteroepitaxial Y 2 O 3 films were grown on oxidized and clean Si (100) surfaces by ion
assisted evaporation under an ultrahigh vacuum. The crystalline structure, crystallinity,
morphology, and electrical properties were investigated using various techniques. The
crystallinity assessed by x-ray diffraction and Rutherford backscattering spectroscopy shows
that the films grown on the oxidized Si substrates have better crystallinity and smoother
morphology compared to those on the clean Si. As the annealing temperature increases, the …