Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application
We have systematically studied a series of silicon carbide multilayer (# SiC) samples, each
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC:
H) having identical band gap of 2.2 eV but different amount of crystalline silicon volume
fraction. The thickness of the μc-SiC: H layer deposited at higher power (termed as HPL)
with higher degree of crystallinity was kept fixed at a value of 5 nm, while the thickness of the
other μc-SiC: H layer deposited at a lower power (termed as LPL) was changed from 13 nm …
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC:
H) having identical band gap of 2.2 eV but different amount of crystalline silicon volume
fraction. The thickness of the μc-SiC: H layer deposited at higher power (termed as HPL)
with higher degree of crystallinity was kept fixed at a value of 5 nm, while the thickness of the
other μc-SiC: H layer deposited at a lower power (termed as LPL) was changed from 13 nm …
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