Synthesis of a wideband low noise amplifier
A Jajoo, M Sperling, T Mukherjee - Proceedings of the 16th ACM Great …, 2006 - dl.acm.org
A Jajoo, M Sperling, T Mukherjee
Proceedings of the 16th ACM Great Lakes symposium on VLSI, 2006•dl.acm.orgTwo generations of a wideband low noise amplifier (LNA) employing noise canceling
principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm
SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB
over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The
calculated figure of merit (FOM) is better than many reported wideband LNAs, including a
few from even more advanced processes. The synthesis design constraints were improved …
principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm
SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB
over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The
calculated figure of merit (FOM) is better than many reported wideband LNAs, including a
few from even more advanced processes. The synthesis design constraints were improved …
Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first gener-ation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor.
ACM Digital Library以上显示的是最相近的搜索结果。 查看全部搜索结果