Tailoring morphology and vertical yield of self-catalyzed GaP nanowires on template-free Si substrates
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables
new approaches with respect to designing photonic and electronic devices at the nanoscale.
We present a comprehensive study of highly controllable self-catalyzed growth of gallium
phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy.
We report the approach to form the silicon oxide layer, which reproducibly provides a high
yield of vertical GaP NWs and control over the NW surface density without a pre-patterned …
new approaches with respect to designing photonic and electronic devices at the nanoscale.
We present a comprehensive study of highly controllable self-catalyzed growth of gallium
phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy.
We report the approach to form the silicon oxide layer, which reproducibly provides a high
yield of vertical GaP NWs and control over the NW surface density without a pre-patterned …
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