Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation

R En-nadir, H El-ghazi, L Leontie, M Tihtih… - Physica B: Condensed …, 2023 - Elsevier
This paper conducts a comprehensive theoretical examination of the electronic and optical
responses, including linear and nonlinear optical responses, of an InGaN-based quantum
well with a variable inverted parabolic confinement potential. This examination takes into
account the effects of applied vertical electric fields, variable indium content, different
confinement shapes, and sizes. The Schrödinger equation is solved numerically using the
finite element method and the effective mass theory. The results indicate that both the …
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