Temperature-dependent energy storage properties of antiferroelectric Pb0. 96La0. 04Zr0. 98Ti0. 02O3 thin films
The energy storage properties of antiferroelectric (AFE) Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3
(PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric
field. The results indicated that recoverable energy density (U re) and charge-discharge
efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225
C), while U re increases linearly and η decreases exponentially with increasing electric field
at room temperature. These findings are explained qualitatively on the basis of the kinetics …
(PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric
field. The results indicated that recoverable energy density (U re) and charge-discharge
efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225
C), while U re increases linearly and η decreases exponentially with increasing electric field
at room temperature. These findings are explained qualitatively on the basis of the kinetics …
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